gEEk spEEk – S and Z Parameters for PDN Measurements and Simulations

Presented by: Istvan Novak In signal integrity, describing passive devices and channels with S parameters has become the norm. Power distribution is different. Dependent on the application, other forms may be best for the purpose. First we will focus on the scattering parameters of bypass capacitors. We will explain with measured and simulated data, how to use the Touchstone models that are created for series or parallel connected capacitors. Next, we will learn why design is usually done with impedances, while measurements are still done with S parameters.