GLASS CORE TECHNOLOGY

Contact [email protected] for assistance with your next generation microelectronics needs.

ULTRA-MINIATURIZED | HIGHLY INTEGRATED | HIGH PERFORMANCE

THROUGH-GLASS VIAS (TGVs) IN GLASS SUBSTRATES
through glass

The industry’s only proven process for metalization and hermetic sealing of ultra-high-density Through-Glass Vias (TGVs) enables:

  • Extreme Miniaturization & Integration
  • High Performance Electronics
  • High Reliability Packaging Solutions
REDISTRIBUTION LAYER (RDL) CIRCUIT PATTERNING ON GLASS
redistribution layer

RDL’s unique thin-film process enables circuit formation on glass substrates, providing for:

  • Low Loss Fan-Out of Chip and Package Interconnects
  • Lower Cost Compared to Traditional Silicon-Based Interposers
  • Integrated Passive Devices, Filters
  • Endless IoT Applications
Watch glass core technology Video

HIGH PERFORMANCE ELECTRONICS

desired properties

Glass substrates offer high structural integrity, resistance to vibration and temperature, environmental ruggedness, and low electrical loss, making them ideal for next generation microelectronics demands. Samtec’s proprietary Glass Core Technology process leverages the performance benefits of glass to enable performance optimized, ultra-miniaturized substrates for next generation designs.

automotive mems

Automotive MEMS and Sensors

Smart Building Sensor Modules

Medical Robotics Sensors

rf components

RF Component and Modules

Advanced RF SiP

Automotive RF

cmos image

CMOS Image Sensor (CIS)

Automotive Camera Modules

Active Images & LiDAR

Solid State Medical Images

GLASS CORE TECHNOLOGY DESIGN RULES & GUIDELINES

NOTE:

These dimensions are guidelines designed to help release product to manufacturing as quickly as possible. Full capabilities are not limited to the specifications listed below. Please contact [email protected] for applications with tighter requirements.

THROUGH-GLASS VIA (TGV) ENABLED GLASS INTERPOSERS

Samtec’s Through-Glass Vias (TGVs) enable Glass Core Technology (i.e., glass interposers, smart glass substrates and microstructured glass substrates). TGV-enabled glass substrates permit the integration of glass and metal into a single wafer, while interposers promote more efficient package interconnects and manufacturing cycle times.

The hermetically sealed TGVs are manufactured from both high quality borosilicate glass, fused silica (aka quartz), and sapphire. Through the use of high quality glass wafer material, combined with advanced interconnect technologies (e.g., Redistribution Layer), Samtec’s Glass Core Technology enables a one-of-a-kind packaging product.

Through-Glass Via Cross-Section View
Standard TGV Design Guidleines
Glass Characteristics & Applications
Borosilicate Glass
  • Excellent clarity & rigidity
  • High thermal shock resistance
  • CTE matched to Silicon
  • Applications include:
    • Biomedical
    • 2.5D / 3D Packaging
    • Displays
    • Optoelectronics
Fused Silica
  • High purity material
  • Low dielectric constant & loss factor
  • Very low thermal expansion
  • Wide operating temp range
  • Applications include:
    • Biomedical
    • RF MEMS
    • Optics, Imaging & Photonics
Borosilicate Glass & Fused Silica
  Detail UNITS
A Nominal Glass Thickness 260 µm
B Via Diameter (min) 40 µm
  Via Tapering 5 deg
C Via Pitch 2 x Via Diameter
  Total Thickness Variation (TTV) 15 µm
  Via Positional Accuracy +/- 5 µm

REDISTRIBUTION LAYER (RDL) TECHNOLOGY

Samtec's Redistribution Layer (RDL) technology enables circuit formation on glass substrates for interfacing to TGVs via a unique thin-film approach. This provides for low loss fan-out of chip and package interconnects, and lower costs compared to traditional Silicon-based interposers.

Glass Core Technology Capabilities
  Specifications Current Roadmap
  No. of Metal Layers per Side 2 4
A Glass Core Thickness 260 µm 100 - 450 µm
  Via Diameter 40 µm 10 µm
  Annular Ring (Catch Pad) 20 µm larger than Via Diameter  
  Via Pitch (min) 2 x Diameter 40 µm
D, E Line/Spacing (min) 15 µm / 15 µm 10 µm / 10 µm
F Copper Thickness 1 - 5 µm  
G Dielectric Thickness 1 & 2 (min) 4 µm  
  Solder Ball Types SN63Pb37 and SAC305 Pb95Sn5, Pb90Sn10, Cu/Sn Pillars
  Under Bump Metallization (UBM) ENIG ENIPIG
Top View of Circuit for Top/Bottom RDL
Standard TGV Design Guidleines
Cross-Section - 2 Metal Layers (Current Capability)
Profile
Cross-Section - 4 Metal Layers (Future Capability)
Profile

Visit samtec.com/microelectronics to learn more about Samtec's Glass Core Technology and Advanced IC Packaging Capabilities. Contact [email protected] to speak with our specialists about your next generation microelectronics needs.

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